STMicroelectronics STS11NF30L

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.0085Ohm;ID 11A;SO-8;PD 2.5W;VGS +/-18V;-55

N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET

30 V-11 A-0.0085 OHM SO-8 N-CHANNEL LOW GATE CHARGE STRIPFET II POWER MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

N CHANNEL MOSFET, 30V, 11A, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.0085ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance @ Vgs = 4.5V:19mohm; On State resistance @ Vgs = 10V:10.5mohm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Power Dissipation Ptot Max:2.5W; Pulse Current Idm:44A; Row Pitch:6.3mm; SMD Marking:STS11NF30L; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V