STMicroelectronics STP75NF75
Production
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight9.071847 g
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max11 mΩ
Resistance11 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time66 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)75 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: +16.24%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STP75NF75.
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Descriptions
Descriptions of STMicroelectronics STP75NF75 provided by its distributors.
N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 9.5 / Gate-Source Voltage V = 20 / Fall Time ns = 30 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 66 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +16.24%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight9.071847 g
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max11 mΩ
Resistance11 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time66 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)75 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant