STMicroelectronics STP4NB50

Mosfet N-ch 500V 3.8A TO-220
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Technical
Continuous Drain Current (ID)3.8 A
Current Rating3.8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-65 °C
Power Dissipation80 W
Rds On Max2.8 Ω
Rise Time8 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)500 V

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP4NB50.

DigiKey
Datasheet7 pages20 years ago
B+D Enterprises
Datasheet6 pages0 years ago

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STP4NB50.

Descriptions

Descriptions of STMicroelectronics STP4NB50 provided by its distributors.

MOSFET N-CH 500V 3.8A TO-220
TO220 3.8A 500V 80W N-MOS
OEMs, CMs ONLY (NO BROKERS)
CAP CER 0.047UF 50V X7R RADIAL
MOSFETs RO 511-STP4NK50Z

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Technical
Continuous Drain Current (ID)3.8 A
Current Rating3.8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-65 °C
Power Dissipation80 W
Rds On Max2.8 Ω
Rise Time8 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)500 V

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP4NB50.

DigiKey
Datasheet7 pages20 years ago
B+D Enterprises
Datasheet6 pages0 years ago

Compliance

Environmental Classification
Lead FreeContains Lead
Radiation HardeningNo
RoHSCompliant