STMicroelectronics STP40N65M2

N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
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In Stock

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Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance87 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.355 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Number of Channels1
Power Dissipation250 W
Rds On Max99 mΩ
Turn-Off Delay Time96.5 ns
Turn-On Delay Time15 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP40N65M2.

Upverter
Datasheet14 pages9 years ago

Inventory History

3 month trend:
-93.11%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STP40N65M2.

Related Parts

Descriptions

Descriptions of STMicroelectronics STP40N65M2 provided by its distributors.

N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
N-Channel 650 V 99 mOhm Flange Mount MDmesh M2 Powr Mosfet - TO-220
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-220AB Tube

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance87 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.355 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Number of Channels1
Power Dissipation250 W
Rds On Max99 mΩ
Turn-Off Delay Time96.5 ns
Turn-On Delay Time15 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP40N65M2.

Upverter
Datasheet14 pages9 years ago

Compliance

Environmental Classification
RoHSCompliant