STMicroelectronics STP40N60M2

N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
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Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Weight329.988449 mg
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max88 mΩ
Rise Time13.5 ns
Threshold Voltage2 V
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Dimensions
Height19.68 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP40N60M2.

Farnell
Datasheet21 pages11 years ago
Future Electronics
Datasheet17 pages11 years ago
Datasheet23 pages11 years ago
STMicroelectronics
Datasheet21 pages11 years ago
TME
Datasheet12 pages9 years ago

Inventory History

3 month trend:
+44.50%

Supply Chain

Lifecycle StatusProduction (Last Updated: 2 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STP40N60M2.

Related Parts

Descriptions

Descriptions of STMicroelectronics STP40N60M2 provided by its distributors.

N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
Single N-Channel 650 V 0.088 O 250 W Flange Mount Power Mosfet - TO-220-3
Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 34A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Weight329.988449 mg
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max88 mΩ
Rise Time13.5 ns
Threshold Voltage2 V
Turn-Off Delay Time96 ns
Turn-On Delay Time20.5 ns
Dimensions
Height19.68 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP40N60M2.

Farnell
Datasheet21 pages11 years ago
Future Electronics
Datasheet17 pages11 years ago
Datasheet23 pages11 years ago
STMicroelectronics
Datasheet21 pages11 years ago
TME
Datasheet12 pages9 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant