STMicroelectronics STP140NF75
Production
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max7.5 mΩ
Resistance7.5 mΩ
Rise Time140 ns
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)75 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: -15.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STP140NF75.
Related Parts
STMicroelectronicsSTP160N75F3
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP150NF55
STP150NF55 Series N-Channel 55 V 6 mOhm STripFET II MosFet - TO-220
InfineonAUIRF1010Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Descriptions
Descriptions of STMicroelectronics STP140NF75 provided by its distributors.
N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET
N-Channel 75 V 7.5 mO Flange Mount STripFETIII Power MosFet - TO-220
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
MOSFET N-Ch 75V 120A UltraFET III TO220
MOSFET, N CH, 75V, 120A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -15.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max7.5 mΩ
Resistance7.5 mΩ
Rise Time140 ns
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)75 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant