STMicroelectronics STP12PF06
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance850 pF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Nominal Vgs3.4 V
Number of Elements1
Power Dissipation60 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time40 ns
TerminationThrough Hole
Threshold Voltage3.4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP12PF06.
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Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STP12PF06.
Descriptions
Descriptions of STMicroelectronics STP12PF06 provided by its distributors.
P-Channel 60V - 0.18 Ohm - 12A TO-220 STripFET(TM) II POWER MOSFET
Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
MOSFET P CH 60V 12A TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance850 pF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Nominal Vgs3.4 V
Number of Elements1
Power Dissipation60 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time40 ns
TerminationThrough Hole
Threshold Voltage3.4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP12PF06.
element14 APAC
Future Electronics
STMicroelectronics
element14
Nu Horizons
iiiC
Jameco
DigiKey
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant