STMicroelectronics STP10NK60Z
Production
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Operating Temperature150 °C
Max Power Dissipation115 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation115 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time20 ns
Threshold Voltage3.75 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: -36.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STP10NK60Z.
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Descriptions
Descriptions of STMicroelectronics STP10NK60Z provided by its distributors.
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 115W; -55°C ~ 150°C;;
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH Power MosFet - TO-220
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:115W Rohs Compliant: Yes |Stmicroelectronics STP10NK60Z
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -36.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Operating Temperature150 °C
Max Power Dissipation115 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation115 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time20 ns
Threshold Voltage3.75 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant