STMicroelectronics STN4NF20L
Production
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time10.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance150 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.3 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation3.3 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2 V
Dimensions
Height1.9 mm
Inventory History
3 month trend: +6.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STN4NF20L.
Related Parts
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STMicroelectronicsSTN1NF20
N-channel 200 V, 1.1 Ohm, 1 A STripFET(TM) II Power MOSFET in SOT-223 package
Descriptions
Descriptions of STMicroelectronics STN4NF20L provided by its distributors.
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
200 V, 1 A, 1.1 OHM, SOT-223 LOW GATE CHARGE STRIPFET II N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 1A I(D), 200V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:200V; On Resistance
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: StripFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +6.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time10.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance150 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.3 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation3.3 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2 V
Dimensions
Height1.9 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant