STMicroelectronics STN3NF06L
Production
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Weight4.535924 g
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation3.3 W
Rds On Max100 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time20 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)60 V
Dimensions
Height1.8 mm
Length6.5 mm
Width3.5 mm
Inventory History
3 month trend: +12.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for STMicroelectronics STN3NF06L.
Factory Futures
element14 APAC
STMicroelectronics SCT
iiiC
Nu Horizons
DigiKey
Farnell
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.454
$ 0.366
Stock
1,854,987
857,415
Authorized Distributors
11
8
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
2.8 V
3 V
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
16 V
20 V
Power Dissipation
3.3 W
3.3 W
Input Capacitance
340 pF
315 pF
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STN3NF06L.
Related Parts
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STMicroelectronicsSTN3NF06
N-Channel 60V - 0.07Ohm - 3A - SOT-223 StripFET(TM) II POWER MOSFET
onsemiNDT3055
N-Channel Enhancement Mode Field Effect Transistor 60V, 4A, 100mΩ
Descriptions
Descriptions of STMicroelectronics STN3NF06L provided by its distributors.
N-channel 60 V, 0.07 Ohm typ., 4 A STripFET II Power MOSFET in SOT-223 package
Trans MOSFET N-CH 60V 4A Automotive 4-Pin(3+Tab) SOT-223 T/R
N-CHANNEL 60 V, 0.07 OHM-4 A-SOT-223 STRIPFET II POWER MOSFET Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 60V, 4A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Stmicroelectronics STN3NF06L
Transistor Polarity = N-Channel / Configuration = Dual Common Drain / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 10 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +12.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Weight4.535924 g
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation3.3 W
Rds On Max100 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time20 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)60 V
Dimensions
Height1.8 mm
Length6.5 mm
Width3.5 mm
Documents
Download datasheets and manufacturer documentation for STMicroelectronics STN3NF06L.
Factory Futures
element14 APAC
STMicroelectronics SCT
iiiC
Nu Horizons
DigiKey
Farnell
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant