STMicroelectronics STN1NK80Z

Mosfet N-ch 800V 0.25A SOT223 / Trans Mosfet N-ch 800V 0.25A 4-PIN(3+TAB) SOT-223 T/r
Production

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Technical Specifications

Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)250 mA
Current Rating250 mA
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance16 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max16 Ω
Resistance16 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)800 V
Dimensions
Height1.8 mm
Length6.5 mm
Width3.5 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STN1NK80Z.

element14 APAC
Datasheet15 pages26 years ago
STMicroelectronics
Datasheet15 pages13 years ago
Future Electronics
Datasheet15 pages26 years ago
iiiC
Datasheet15 pages26 years ago

Inventory History

3 month trend:
+46.37%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STN1NK80Z.

Related Parts

Descriptions

Descriptions of STMicroelectronics STN1NK80Z provided by its distributors.

MOSFET N-CH 800V 0.25A SOT223 / Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R
N-Channel 800 V 16 Ohm Surface Mount SuperMESH™ MosFet - SOT-223
N-channel 800 V, 13 Ohm typ., 0.25 A SuperMESH Zener protected Power MOSFET in a SOT-223 package
Power Mosfet, N Channel, 250 Ma, 800 V, 13 Ohm, 30 V, 3.75 V |Stmicroelectronics STN1NK80Z
MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Source Voltage Vds:800V; On Resistance
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 16 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 250mA; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 13ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 250mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)250 mA
Current Rating250 mA
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance16 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max16 Ω
Resistance16 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)800 V
Dimensions
Height1.8 mm
Length6.5 mm
Width3.5 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STN1NK80Z.

element14 APAC
Datasheet15 pages26 years ago
STMicroelectronics
Datasheet15 pages13 years ago
Future Electronics
Datasheet15 pages26 years ago
iiiC
Datasheet15 pages26 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant