STMicroelectronics STGW30NC60W

IGBTs Insulated Gate Bipolar Transistor N-Ch 600 V 30 A Ultra Fast PowerMESH

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-247-3
MountThrough Hole
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Continuous Drain Current (ID)30 A
Current Rating60 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Power Dissipation200 W
Rise Time12 ns
Turn-Off Delay Time118 ns
Turn-On Delay Time29.5 ns
Voltage Rating (DC)600 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGW30NC60W.

STMicroelectronics
Datasheet16 pages18 years ago
Datasheet16 pages18 years ago
Components Direct
Datasheet16 pages18 years ago
iiiC
Datasheet16 pages18 years ago
Future Electronics
Datasheet14 pages18 years ago
Nu Horizons
Datasheet16 pages18 years ago
Mouser
Datasheet14 pages18 years ago
DigiKey
Datasheet14 pages18 years ago

Alternate Parts

Price @ 1000
$ 2.719
$ 2.719
Stock
224,206
361,379
361,379
Authorized Distributors
1
11
11
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247
TO-247
Collector Emitter Breakdown Voltage
600 V
600 V
600 V
Max Collector Current
60 A
60 A
60 A
Power Dissipation
200 W
200 W
200 W
Collector Emitter Saturation Voltage
-
2.1 V
2.1 V
Reverse Recovery Time
-
40 ns
40 ns

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STGW30NC60W.

Related Parts

Descriptions

Descriptions of STMicroelectronics STGW30NC60W provided by its distributors.

IGBTs Insulated Gate Bipolar Transistor N-Ch 600 V 30 A Ultra Fast PowerMESH
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
N-CHANNEL 30A - 600V IGBTTO 247<AZ

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-247-3
MountThrough Hole
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Continuous Drain Current (ID)30 A
Current Rating60 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Power Dissipation200 W
Rise Time12 ns
Turn-Off Delay Time118 ns
Turn-On Delay Time29.5 ns
Voltage Rating (DC)600 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGW30NC60W.

STMicroelectronics
Datasheet16 pages18 years ago
Datasheet16 pages18 years ago
Components Direct
Datasheet16 pages18 years ago
iiiC
Datasheet16 pages18 years ago
Future Electronics
Datasheet14 pages18 years ago
Nu Horizons
Datasheet16 pages18 years ago
Mouser
Datasheet14 pages18 years ago
DigiKey
Datasheet14 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant