STMicroelectronics STGP10NB60S

STGP10NB60S Series N-Channel 600 V 10 A PowerMESH IGBT - TO-220
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.35 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current10 A
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Max Collector Current29 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Power Dissipation80 W
Schedule B8541290080
Turn-On Delay Time7 µs
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGP10NB60S.

element14 APAC
Datasheet19 pages18 years ago
Newark
Datasheet19 pages18 years ago
Future Electronics
Datasheet13 pages19 years ago
iiiC
Datasheet19 pages18 years ago
Nu Horizons
Datasheet13 pages19 years ago

Inventory History

3 month trend:
-6.20%

Supply Chain

Lifecycle StatusProduction (Last Updated: 2 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STGP10NB60S.

Related Parts

Descriptions

Descriptions of STMicroelectronics STGP10NB60S provided by its distributors.

STGP10NB60S Series N-Channel 600 V 10 A PowerMESH IGBT - TO-220
Trans IGBT Chip N-CH 600V 29A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 1.35V, 29A, TO-220-3; DC Collector Current: 29A; Collector Emitter Saturation Voltage Vce(on): 1.35V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.35 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current10 A
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Max Collector Current29 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Power Dissipation80 W
Schedule B8541290080
Turn-On Delay Time7 µs
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGP10NB60S.

element14 APAC
Datasheet19 pages18 years ago
Newark
Datasheet19 pages18 years ago
Future Electronics
Datasheet13 pages19 years ago
iiiC
Datasheet19 pages18 years ago
Nu Horizons
Datasheet13 pages19 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant