STMicroelectronics STGF10NB60SD
Production
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.35 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current23 A
Continuous Drain Current (ID)20 A
Current Rating10 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage1.9 V
Max Breakdown Voltage600 V
Max Collector Current23 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-55 °C
Power Dissipation25 W
Reverse Recovery Time37 ns
Rise Time460 ns
Schedule B8541290080
Turn-Off Delay Time1.2 µs
Turn-On Delay Time460 ns
Voltage Rating (DC)600 V
Dimensions
Height20 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: +261%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STGF10NB60SD.
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Descriptions
Descriptions of STMicroelectronics STGF10NB60SD provided by its distributors.
Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220FP Tube
STGF10NB60SD Series 600 V 23 A Through Hole Silicon IGBT - TO-220FP
16 A, 600 V low drop IGBT with soft and fast recovery diode
STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
IGBT, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +261%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.35 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current23 A
Continuous Drain Current (ID)20 A
Current Rating10 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage1.9 V
Max Breakdown Voltage600 V
Max Collector Current23 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-55 °C
Power Dissipation25 W
Reverse Recovery Time37 ns
Rise Time460 ns
Schedule B8541290080
Turn-Off Delay Time1.2 µs
Turn-On Delay Time460 ns
Voltage Rating (DC)600 V
Dimensions
Height20 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant