STMicroelectronics STGB20NB37LZT4

Trans IGBT Chip N-CH 375V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage425 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)375 V
Continuous Drain Current (ID)20 A
Current Rating20 A
Element ConfigurationSingle
Max Breakdown Voltage425 V
Max Collector Current40 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
PackagingTape & Reel (TR)
Power Dissipation200 W
Schedule B8541290080
Turn-Off Delay Time2 µs
Turn-On Delay Time2.3 µs

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGB20NB37LZT4.

Components Direct
Datasheet8 pages20 years ago
STMicroelectronics
Datasheet8 pages20 years ago
Future Electronics
Datasheet8 pages20 years ago

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STGB20NB37LZT4.

Related Parts

Descriptions

Descriptions of STMicroelectronics STGB20NB37LZT4 provided by its distributors.

Trans IGBT Chip N-CH 375V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
STGB Series 425 Vce 40 A 2.3 us t(on) N-Channel PowerMESH™ IGBT - TO-263
20 A, 400 V internally clamped IGBT
IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp
IGBT Transistors N-Ch Clamped 20 Amp
IGBT CLAMP 400V 20A 1,8V TO263
STMICROELECTRONICS STGB20NB37LZT4
IGBT, SMD, 400V, 20A, D2-PAK; Transistor type:PowerMESH; Voltage, Vces:400V; Current, Ic continuous a max:40A; Voltage, Vce sat max:2V; Power dissipation:200W; Case style:D2-PAK; Current, Icm pulsed:80A; Pins, No. of:3; Termination Type:SMD; Time, fall:11500ns; Time, rise:600ns; Transistor polarity:N

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage425 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)375 V
Continuous Drain Current (ID)20 A
Current Rating20 A
Element ConfigurationSingle
Max Breakdown Voltage425 V
Max Collector Current40 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
PackagingTape & Reel (TR)
Power Dissipation200 W
Schedule B8541290080
Turn-Off Delay Time2 µs
Turn-On Delay Time2.3 µs

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGB20NB37LZT4.

Components Direct
Datasheet8 pages20 years ago
STMicroelectronics
Datasheet8 pages20 years ago
Future Electronics
Datasheet8 pages20 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant