STMicroelectronics STF13NM60N
Production
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Manufacturer Package IdentifierTO-220FP-7012510
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation25 W
Rds On Max360 mΩ
Resistance280 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: +0.26%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STF13NM60N.
Related Parts
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N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
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N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220FP package
Descriptions
Descriptions of STMicroelectronics STF13NM60N provided by its distributors.
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP package
Single N-Channel 600 V 0.36 Ohm 27 nC 90 W Silicon Flange Mount Mosfet TO-220FP
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
MOSFET, N CH, 600V, 11A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
N-CHANNEL 600 VOLT, 280 MILLI OHM TYP., 11 AMP MDMESH II POWER MOSFET Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N CH 600V 11A TO220FP; Transistor Polarity:N Channel; On Resistance Rds(on):0.28ohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; Continuous Drain Current Id:5.5A; Package / Case:TO-220FP; ;RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.26%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Manufacturer Package IdentifierTO-220FP-7012510
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation25 W
Rds On Max360 mΩ
Resistance280 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant