STMicroelectronics STD25NF10T4
Production
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)25 A
Current Rating25 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation100 W
Rds On Max38 mΩ
Resistance38 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Inventory History
3 month trend: +164%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.84
$ 0.857
Stock
1,370,612
298,512
Authorized Distributors
10
8
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
25 A
25 A
Threshold Voltage
2 V
-
Rds On Max
38 mΩ
38 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
100 W
100 W
Input Capacitance
1.55 nF
1.55 nF
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STD25NF10T4.
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Descriptions
Descriptions of STMicroelectronics STD25NF10T4 provided by its distributors.
Mosfet Transistor, N Channel, 12.5 A, 100 V, 33 Mohm, 10 V, 3 V |Stmicroelectronics STD25NF10T4
N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
MOSFET N-CH 100V 25A DPAK / Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R
N-channel 100 V, 0.033 Ohm typ., 25 A StripFET Power MOSFET in DPAK package
Ciiva Crawler
N-Channel 100 V 0.038 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
MOSFET, N CH, 100V, 25A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 25A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 100V, 25A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +164%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)25 A
Current Rating25 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation100 W
Rds On Max38 mΩ
Resistance38 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant