STMicroelectronics STB80N20M5
Production
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Technical
Continuous Drain Current (ID)61 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time176 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.329 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time31 ns
Turn-Off Delay Time131 ns
Inventory History
3 month trend: +406%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STB80N20M5.
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Descriptions
Descriptions of STMicroelectronics STB80N20M5 provided by its distributors.
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package
Trans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 65A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 61A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: Mdmesh V Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +406%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Technical
Continuous Drain Current (ID)61 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time176 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.329 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time31 ns
Turn-Off Delay Time131 ns