STMicroelectronics STB32NM50N
Production
In StockTechnical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time23.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.973 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max130 mΩ
Rise Time9.5 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time21.5 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Inventory History
3 month trend: +30.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STB32NM50N.
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Descriptions
Descriptions of STMicroelectronics STB32NM50N provided by its distributors.
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package
N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK
Trans MOSFET N-CH 500V 22A 3-Pin(2+Tab) D2PAK T/R
MOSFET, N-CH, 500V, 22A, 190W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +30.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time23.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.973 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max130 mΩ
Rise Time9.5 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time21.5 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm