STMicroelectronics STB13007DT4
Production
In StockTechnical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)400 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min8
Max Breakdown Voltage400 V
Max Collector Current8 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation80 W
Manufacturer Package IdentifierTO-263-P011P6
Min Operating Temperature-65 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation80 W
Schedule B8541290080
Voltage Rating (DC)400 V
Dimensions
Height4.83 mm
Inventory History
3 month trend: +272%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STB13007DT4.
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Descriptions
Descriptions of STMicroelectronics STB13007DT4 provided by its distributors.
400V 80W 8A 8@5A5V 3V@5A1A NPN +150¡Í@(Tj) D2PAK Bipolar Transistors - BJT ROHS
STB1300 Series NPN 400 V 8 A 80 W Fast-Switching Power Transistor - D2PAK
Trans GP BJT NPN 400V 8A 80000mW 3-Pin(2+Tab) D2PAK T/R
Bipolar Transistors - BJT NPN power transistor
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
Power Bipolar, NPN, null, -mA, D2PAK, Tape and Reel
STMicroelectronics SCT
High voltage fast-switching NPN power transistor
TRANSISTOR, BJT, NPN, 400V, 8A, TO-263-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 18hFE; Transis
Bipolar Transistor, Npn, 400V, To-263, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STB13007DT4
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +272%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)400 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min8
Max Breakdown Voltage400 V
Max Collector Current8 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation80 W
Manufacturer Package IdentifierTO-263-P011P6
Min Operating Temperature-65 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation80 W
Schedule B8541290080
Voltage Rating (DC)400 V
Dimensions
Height4.83 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant