STMicroelectronics STB120NF10T4
Production
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight13.607771 g
Technical
Continuous Drain Current (ID)110 A
Current Rating120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation312 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingCut Tape
Power Dissipation312 W
Rds On Max10.5 mΩ
Resistance10.5 mΩ
Rise Time90 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time132 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)100 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Inventory History
3 month trend: +7.15%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STB120NF10T4.
Related Parts
InfineonIRFS4410ZPBF
IRFS4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin D2PAK
STMicroelectronicsSTB140NF75T4
N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET
InfineonIRFS4410TRLPBF
INFINEON IRFS4410TRLPBF MOSFET Transistor, N Channel, 88 A, 100 V, 0.008 ohm, 10 V, 4 VNew
Descriptions
Descriptions of STMicroelectronics STB120NF10T4 provided by its distributors.
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
N-Channel 100 V 0.0105 Ohm Surface Mount STripFET II MosFet - D2PAK
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 110A D2PAK
Power Field-Effect Transistor, 120A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:312W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:110A; On State resistance @ Vgs = 10V:10.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:312W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +7.15%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight13.607771 g
Technical
Continuous Drain Current (ID)110 A
Current Rating120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation312 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingCut Tape
Power Dissipation312 W
Rds On Max10.5 mΩ
Resistance10.5 mΩ
Rise Time90 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time132 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)100 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant