Vishay SQM40031EL_GE3

-40V, -120A, 3mohm, P-Channel, TrenchFET® power MOSFET, TO-263, AEC-Q101
Datasheet

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Technical Specifications

Physical
Case/PackageTO-263
Technical
Continuous Drain Current (ID)-120 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)-40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation375 W
Schedule B8541290080
Turn-Off Delay Time250 ns
Turn-On Delay Time21 ns
Dimensions
Height5.08 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQM40031EL_GE3.

Newark
Datasheet6 pages7 years ago
Future Electronics
Datasheet8 pages3 years ago
Upverter
Datasheet6 pages4 years ago
Technical Drawing1 page10 years ago

Inventory History

3 month trend:
Restocked

Engineering Resources

View Evaluation kits and Reference designs for Vishay SQM40031EL_GE3.

Descriptions

Descriptions of Vishay SQM40031EL_GE3 provided by its distributors.

-40V, -120A, 3mohm, P-Channel,TrenchFET® power MOSFET, TO-263, AEC-Q101
Mosfet, P-Ch, 40V, 120A, 175Deg C, 375W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQM40031EL_GE3
Power Field-Effect Transistor, 120A I(D), 40V, 0.003ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SQM40031EL-GE3
  • SQM40031EL/GE3

Technical Specifications

Physical
Case/PackageTO-263
Technical
Continuous Drain Current (ID)-120 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)-40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation375 W
Schedule B8541290080
Turn-Off Delay Time250 ns
Turn-On Delay Time21 ns
Dimensions
Height5.08 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQM40031EL_GE3.

Newark
Datasheet6 pages7 years ago
Future Electronics
Datasheet8 pages3 years ago
Upverter
Datasheet6 pages4 years ago
Technical Drawing1 page10 years ago

Compliance

Environmental Classification
RoHSNon-Compliant
Compliance Statements
Rohs Statement5 pages12 years ago