Vishay SQM120P10_10M1LGE3
Technical Specifications
Physical
Case/PackageD2PAK
Number of Pins3
Technical
Continuous Drain Current (ID)-120 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance8.1 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation375 W
Schedule B8541290080
Turn-Off Delay Time120 ns
Turn-On Delay Time20 ns
Dimensions
Height5.08 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SQM120P10_10M1LGE3.
Descriptions
Descriptions of Vishay SQM120P10_10M1LGE3 provided by its distributors.
Mosfet, P-Ch, 100V, 120A, 175Deg C, 375W Rohs Compliant: Yes |Vishay SQM120P10_10M1LGE3
Trans MOSFET P-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK
Single P-Channel 100 V 375 W 190 nC Silicon Surface Mount Mosfet - TO-263-3
Trans MOSFET P-CH 100V 120A 3-Pin TO-263 T/R
P-CHANNEL 100-V (D-S) 175C MOSFET
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Number of Pins3
Technical
Continuous Drain Current (ID)-120 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance8.1 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation375 W
Schedule B8541290080
Turn-Off Delay Time120 ns
Turn-On Delay Time20 ns
Dimensions
Height5.08 mm