Vishay SQJA86EP-T1_GE3
Technical Specifications
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance15.5 mΩ
Drain to Source Voltage (Vdss)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation48 W
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height1.267 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SQJA86EP-T1_GE3.
Descriptions
Descriptions of Vishay SQJA86EP-T1_GE3 provided by its distributors.
SQJA86EP Series 80 V 30 A Automotive N-Channel Mosfet - PowerPAK® SO-8
Trans MOSFET N-CH 80V 30A Automotive 5-Pin(4+Tab) PowerPAK SO
N-CHANNEL 80-V (D-S) 175C MOSFET
Power Field-Effect Transistor, 30A I(D), 80V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 80V, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 48W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
MOSFET N-CH 80V 30A POWERPAKSO-8
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance15.5 mΩ
Drain to Source Voltage (Vdss)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation48 W
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height1.267 mm