Vishay SQ7415AEN-T1_GE3

P-Channel 60 V 0.065 O 25.5 nC Automotive TrenchFET® Mosfet-PowerPAK 1212-8
Datasheet

Price and Stock

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Non-Authorized Stocking Distributors
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Technical Specifications

Technical
Continuous Drain Current (ID)-16 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation53 W
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time9 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQ7415AEN-T1_GE3.

Newark
Datasheet8 pages7 years ago
Upverter
Datasheet13 pages1 year ago
Future Electronics
Datasheet13 pages5 years ago

Inventory History

3 month trend:
+36.85%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SQ7415AEN-T1_GE3.

Related Parts

Descriptions

Descriptions of Vishay SQ7415AEN-T1_GE3 provided by its distributors.

P-Channel 60 V 0.065 O 25.5 nC Automotive TrenchFET® Mosfet-PowerPAK 1212-8
MOSFET, AEC-Q101, N-CH, 60V, 16A; Transistor Polarity: P Channel; Continuous Drain Current Id: -16A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.065ohm; Available until stocks are exhausted Alternative available
Mosfet, Aec-Q101, P-Ch, -60V, -16A; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ7415AEN-T1_GE3

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)-16 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation53 W
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time9 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQ7415AEN-T1_GE3.

Newark
Datasheet8 pages7 years ago
Upverter
Datasheet13 pages1 year ago
Future Electronics
Datasheet13 pages5 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago