Vishay SQ2389ES-T1_GE3

AUTOMOTIVE P-CHANNEL 40 V (D-S) 175 DEGREE CELSIUS MOSFET Power Field-Effect Transistor
Datasheet

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Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-4.1 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance84 mΩ
Drain to Source Voltage (Vdss)-40 V
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.3 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3 W
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQ2389ES-T1_GE3.

Newark
Datasheet11 pages7 years ago
Upverter
Datasheet10 pages4 years ago
Future Electronics
Datasheet11 pages6 years ago

Inventory History

3 month trend:
-11.78%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SQ2389ES-T1_GE3.

Related Parts

Descriptions

Descriptions of Vishay SQ2389ES-T1_GE3 provided by its distributors.

AUTOMOTIVE P-CHANNEL 40 V (D-S) 175 DEGREE CELSIUS MOSFET Power Field-Effect Transistor
P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23
Trans MOSFET P-CH 40V 4.1A Automotive AEC-Q101 3-Pin SOT-23 T/R
MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 94mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)
Mosfet, Aec-Q101, N-Ch, -40, -4.1A, Sot23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V Rohs Compliant: Yes |Vishay SQ2389ES-T1_GE3

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SQ2389ES-T1 GE3
  • SQ2389ES-T1-GE3
  • SQ2389ES-T1/GE3
  • SQ2389ES-T1GE3
  • SQ2389EST1GE3

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-4.1 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance84 mΩ
Drain to Source Voltage (Vdss)-40 V
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.3 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3 W
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQ2389ES-T1_GE3.

Newark
Datasheet11 pages7 years ago
Upverter
Datasheet10 pages4 years ago
Future Electronics
Datasheet11 pages6 years ago

Compliance

Environmental Classification
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago