Vishay SQ2315ES-T1_GE3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 78-SQ2315ES-T1_GE3 | 103,125 | 1 | Tape & Reel | 1d | ||||||||
| SQ2315ES-T1_GE3 | 3,000 | 3K | 2d | |||||||||
| SQ2315ES-T1_GE3 | 1,519 | 1 | Cut Tape | 23h | ||||||||
| SQ2315ES-T1_GE3 | 1,519 | 39 | 23h | |||||||||
| SQ2315ES-T1_GE3CT-ND | 18,380 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Case/PackageTO-236
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-5 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)-12 V
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rise Time19 ns
Schedule B8541290080
Threshold Voltage-450 mV
Turn-Off Delay Time28 ns
Turn-On Delay Time17 ns
Dimensions
Height1.12 mm
Inventory History
3 month trend: -3.83%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SQ2315ES-T1_GE3.
Future Electronics
Engineering Resources
View Evaluation kits and Reference designs for Vishay SQ2315ES-T1_GE3.
Related Parts
VishaySI2333CDS-T1-E3
MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity:P Channel; Continuous D
VishaySI2365EDS-T1-GE3
SI2365EDS-T1-GE3 P-channel MOSFET Transistor, 4.7 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2365EDS-T1-GE3
VishaySQ2301ES-T1-GE3
MOSFET, P CH, W/D, 20V, 3.9A, SOT23; Transistor Polarity:P Channel; Continuous D
Descriptions
Descriptions of Vishay SQ2315ES-T1_GE3 provided by its distributors.
P-Channel 12-V (D-S) 175C Mosfet Rohs Compliant: No |Vishay SQ2315ES-T1_GE3
Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R
P-CHANNEL 12-V (D-S) 175C MOSFET
MOSFET P-Channel 12V AEC-Q101 Qualified
P-CH -12V -5A 175°C AECQ SOT-23
场效应管, MOSFET, P沟道, 12V, 5A, 175度 C, 2W;
MOSFET, P-CH, 12V, 5A, 175DEG C, 2W;
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -3.83%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-236
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-5 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)-12 V
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rise Time19 ns
Schedule B8541290080
Threshold Voltage-450 mV
Turn-Off Delay Time28 ns
Turn-On Delay Time17 ns
Dimensions
Height1.12 mm
Documents
Download datasheets and manufacturer documentation for Vishay SQ2315ES-T1_GE3.
Future Electronics
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements