Infineon SPW11N80C3

N-Channel 800 V 0.45 Ohm Cool MOS™ Power Transistor - PG-TO247-3

Datasheet

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Arrow
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SPW11N80C3IN-ND 855 Buy Now »
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359.00 247.00 185.00 138.00 138.00
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726-SPW11N80C3 241 Buy Now »
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2.88 2.45 1.96 1.41 1.23
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1.35 1.35
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3.04 3.04 2.17 1.71 1.71
element14 APAC
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TMOSP6942 1,950 Buy Now »
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1.57 1.52 1.50
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SPW11N80C3 37 Buy Now »
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1.74 1.74 1.74 1.74 1.74
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1.98 1.98 1.41 1.28 1.28
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SPW11N80C3FKSA1 582 ··
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SPW11N80C3 10,000 ··
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SPW11N80C3 530 ··
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Descriptions

N-CH 800V 11A 450mOhm TO247-3
Rutronik
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
Chip One Stop Japan
Transistor: N-MOSFET; 156W; PG-TO247-3
TME
800V,11A,N-ch power MOSFET
Wuhan P&S
N-Channel 800 V 0.45 Ohm Cool MOS™ Power Transistor - PG-TO247-3
Future Electronics
MOSFET, N, COOLMOS, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6A; Resistance, Rds On:1.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOT-93; Termination Type:Through Hole; Alternate Case Style:TO-218; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Power, Ptot:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V
Farnell
MOSFET N-CH 800V 11A TO-247
Digi-Key
Trans MOSFET N-CH 800V 11A 3-Pin TO-247 Tube
Avnet Asia
Trans MOSFET N-CH 800V 11A 3-Pin TO-247 Tube
Avnet
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease of use | Target Applications: Consumer; PC Power; Adapter; Lighting; Solar
Infineon
MOSFET N-CH 800V 11A TO-247 - SPW11N80C3
iiiC
MOSFET N-Channel 800V 11A CoolMOS TO247
RS Components
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC

Technical Specifications

Mounting Type Through Hole
RoHS Compliant
Continuous Drain Current (Ids) 11 A
REACH SVHC Compliance No SVHC
Voltage Rating (DC) 800 V
Polarity N-Channel
Number of Pins 3
Packaging Tube
Case / Package / Footprint TO-247
Rise Time 15 ns
Lead-Free Status Lead Free
Power Dissipation 125 W
Current Rating 11 A
Drain to Source Voltage (Vds) 800 V

Documents

TME
Datasheet 10 pages 8 years ago
Farnell
Datasheet 11 pages 11 years ago
Datasheet 6 pages 7 years ago
iiiC
Datasheet 11 pages 8 years ago
Digi-Key
Datasheet 11 pages 13 years ago
Compliance Statements
Conflict Mineral Statement

Images

Alternate Names

INFINEON TECHNOLOGIES SPW11N80C3
INF SPW11N80C3
INFIN SPW11N80C3
INFI SPW11N80C3
INFINION SPW11N80C3
INFINE SPW11N80C3
INFINEO SPW11N80C3
SIM SPW11N80C3
INFENION SPW11N80C3
INFIEON SPW11N80C3
INFINEN SPW11N80C3
INFINEON TECH SPW11N80C3
IFT SPW11N80C3
IFX SPW11N80C3
INFN SPW11N80C3
INFINEON/SIEMENS SPW11N80C3
INFINEON TECHNO SPW11N80C3
INFINEON TECHNOLOGIES (ASIA SPW11N80C3
INFINEON/PBF SPW11N80C3
INFINEON TEC SPW11N80C3
InfineonPb SPW11N80C3
Infineon Technologies Americas Inc SPW11N80C3
INFIENON SPW11N80C3
Infineon Technologie SPW11N80C3
INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD SPW11N80C3

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