Infineon SPP80P06PHXKSA1
Production
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-60 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.026 nF
Max Dual Supply Voltage-60 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance23 mΩ
Package Quantity500
Power Dissipation340 W
Rise Time18 ns
Schedule B8541290080
Turn-Off Delay Time56 ns
Turn-On Delay Time24 ns
Inventory History
3 month trend: +6.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon SPP80P06PHXKSA1.
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Descriptions
Descriptions of Infineon SPP80P06PHXKSA1 provided by its distributors.
Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - TO-220-3
Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 91A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, Aec-Q101, P-Ch, -60V, To-220- 3; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.021Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Infineon SPP80P06PHXKSA1.
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 30 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 56 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) W = 340
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +6.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-60 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.026 nF
Max Dual Supply Voltage-60 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance23 mΩ
Package Quantity500
Power Dissipation340 W
Rise Time18 ns
Schedule B8541290080
Turn-Off Delay Time56 ns
Turn-On Delay Time24 ns
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements