Infineon SPB80P06PGATMA1
Production
Technical Specifications
Physical
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-80 A
Current Rating-80 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-60 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.026 nF
Max Dual Supply Voltage-60 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance23 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation340 W
Rise Time18 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time56 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)-60 V
Dimensions
Height4.4 mm
Inventory History
3 month trend: -2.66%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon SPB80P06PGATMA1.
Descriptions
Descriptions of Infineon SPB80P06PGATMA1 provided by its distributors.
On a Reel of 1000, P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - D2PAK
Trans MOSFET P-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, P-CH, 60V, 80A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:340W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -2.66%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-80 A
Current Rating-80 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-60 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.026 nF
Max Dual Supply Voltage-60 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance23 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation340 W
Rise Time18 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time56 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)-60 V
Dimensions
Height4.4 mm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
RoHSCompliant
Compliance Statements