Vishay Semiconductor SMP12A-E3/84A

Diode TVS Single Uni-Dir 12V 400W 2-Pin SMP T/R
Datasheet

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Technical Specifications

Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins2
Technical
Breakdown Voltage33.3 V
Clamping Voltage19.9 V
CompositionZener
DirectionUnidirectional
Element ConfigurationSingle
Leakage Current1 µA
Max Breakdown Voltage29.5 V
Max Operating Temperature150 °C
Max Power Dissipation400 W
Max Reverse Leakage Current1 µA
Max Surge Current20.1 A
Min Breakdown Voltage13.3 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Number of Unidirectional Channels1
Operating Supply Voltage12 V
Peak Pulse Current20.1 A
Peak Pulse Power 400 W
PolarityUnidirectional
Power Line ProtectionNo
Reverse Breakdown Voltage13.3 V
Reverse Standoff Voltage12 V
Test Current1 mA
Dimensions
Height1.15 mm
Length8.6 mm
Width2.18 mm

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMP12A-E3/84A.

Farnell
Datasheet4 pages16 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay Semiconductor SMP12A-E3/84A.

Descriptions

Descriptions of Vishay Semiconductor SMP12A-E3/84A provided by its distributors.

Diode TVS Single Uni-Dir 12V 400W 2-Pin SMP T/R
TVS DIODE 12VWM 19.9VC DO220AA
DIODE, TVS, UNIDIR, SMP, 400W, 12V; Diode Type:TVS, Unidirectional; Voltage, Stand-off:12V; Voltage, Vbr:13.3V; Power, Peak Pulse:400W; Time Measured:300µs; Case Style:SMP; No. of Pins:2; Current, Test:1mA; External Depth:1.15mm; External Length / Height:4mm; Peak Pulse Current:20.1A; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Termination Type:SMD; Voltage, Clamping:19.9V; Voltage, Vf Max:2.5V; Width, External:2.18mm

Manufacturer Aliases

Vishay Semiconductor has several brands around the world that distributors may use as alternate names. Vishay Semiconductor may also be known as the following names:

  • Vishay Semiconductor Opto Division
  • Vishay Semiconductor Diodes Division
  • Vishay Semiconductors
  • VISHAY GENERAL SEMICONDUCTOR
  • GENERAL SEMICONDUCTOR
  • GEN SEMI
  • Vishay General Semiconductor - Diodes Division
  • VishaySem
  • General Semiconductor / Vishay
  • VISHAY SEMI
  • VISHAYSEMICOND
  • VISHAY - GENERAL SEMI
  • VISHAY SE
  • VISHAY SEMICONDUCTOR SSP OPTO
  • VISHAY SEMICONDUCTOR DIOD
  • VISHAY/GENERAL SEMICONDUCT0R
  • VISHAY GENERAL SEMICONDUC
  • VISHAY SEMICONDUCTOR PDD
  • GEN SEMI/VISHAY
  • Vishay General Semiconductors
  • Vishary General Semiconductor
  • VISHAY SEMICONDUCTOR ITALIANA

Technical Specifications

Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins2
Technical
Breakdown Voltage33.3 V
Clamping Voltage19.9 V
CompositionZener
DirectionUnidirectional
Element ConfigurationSingle
Leakage Current1 µA
Max Breakdown Voltage29.5 V
Max Operating Temperature150 °C
Max Power Dissipation400 W
Max Reverse Leakage Current1 µA
Max Surge Current20.1 A
Min Breakdown Voltage13.3 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Number of Unidirectional Channels1
Operating Supply Voltage12 V
Peak Pulse Current20.1 A
Peak Pulse Power 400 W
PolarityUnidirectional
Power Line ProtectionNo
Reverse Breakdown Voltage13.3 V
Reverse Standoff Voltage12 V
Test Current1 mA
Dimensions
Height1.15 mm
Length8.6 mm
Width2.18 mm

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMP12A-E3/84A.

Farnell
Datasheet4 pages16 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago