Vishay Semiconductor SMCJ11AHE3/9AT

Diode TVS Single Uni-Dir 11V 1.5KW 2-Pin SMC T/R

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSMC
MountSurface Mount
Technical
Breakdown Voltage12.2 V
Clamping Voltage18.2 V
DirectionUnidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation1.5 kW
Max Reverse Leakage Current5 µA
Max Surge Current82.4 A
Min Breakdown Voltage12.2 V
Min Operating Temperature-55 °C
Operating Supply Voltage11 V
Peak Pulse Current82.4 A
Peak Pulse Power 1.5 kW
PolarityUnidirectional
Reverse Standoff Voltage11 V
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMCJ11AHE3/9AT.

Alternate Parts

Price @ 1000
$ 0.117
$ 0.117
Stock
717
418,310
418,310
Authorized Distributors
0
6
6
Polarity
Unidirectional
Unidirectional
Unidirectional
Number of Unidirectional Channels
-
-
-
Number of Bidirectional Channels
-
-
-
Breakdown Voltage
12.2 V
12.2 V
12.2 V
Clamping Voltage
18.2 V
18.2 V
18.2 V
Peak Pulse Power
1.5 kW
1.5 kW
1.5 kW
Peak Pulse Current
82.4 A
82.4 A
82.4 A

Engineering Resources

View Evaluation kits and Reference designs for Vishay Semiconductor SMCJ11AHE3/9AT.

Descriptions

Descriptions of Vishay Semiconductor SMCJ11AHE3/9AT provided by its distributors.

Diode TVS Single Uni-Dir 11V 1.5KW 2-Pin SMC T/R
TVS 1.5KW UNIDIR 11V 5% SMC

Manufacturer Aliases

Vishay Semiconductor has several brands around the world that distributors may use as alternate names. Vishay Semiconductor may also be known as the following names:

  • Vishay Semiconductor Opto Division
  • Vishay Semiconductor Diodes Division
  • Vishay Semiconductors
  • VISHAY GENERAL SEMICONDUCTOR
  • GENERAL SEMICONDUCTOR
  • GEN SEMI
  • Vishay General Semiconductor - Diodes Division
  • VishaySem
  • General Semiconductor / Vishay
  • VISHAY SEMI
  • VISHAYSEMICOND
  • VISHAY - GENERAL SEMI
  • VISHAY SE
  • VISHAY SEMICONDUCTOR SSP OPTO
  • VISHAY SEMICONDUCTOR DIOD
  • VISHAY/GENERAL SEMICONDUCT0R
  • VISHAY GENERAL SEMICONDUC
  • VISHAY SEMICONDUCTOR PDD
  • GEN SEMI/VISHAY
  • Vishay General Semiconductors
  • Vishary General Semiconductor
  • VISHAY SEMICONDUCTOR ITALIANA

Technical Specifications

Physical
Case/PackageSMC
MountSurface Mount
Technical
Breakdown Voltage12.2 V
Clamping Voltage18.2 V
DirectionUnidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation1.5 kW
Max Reverse Leakage Current5 µA
Max Surge Current82.4 A
Min Breakdown Voltage12.2 V
Min Operating Temperature-55 °C
Operating Supply Voltage11 V
Peak Pulse Current82.4 A
Peak Pulse Power 1.5 kW
PolarityUnidirectional
Reverse Standoff Voltage11 V
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMCJ11AHE3/9AT.

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago