Vishay Semiconductor SMBJ130AHE3/52

Diode TVS Single Uni-Dir 130V 600W 2-Pin SMB T/R

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSMB
MountSurface Mount
Number of Pins2
Technical
Breakdown Voltage144 V
Clamping Voltage209 V
DirectionUnidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation600 W
Max Reverse Leakage Current1 µA
Max Surge Current100 A
Min Breakdown Voltage144 V
Min Operating Temperature-55 °C
Number of Channels1
Operating Supply Voltage130 V
Peak Pulse Current2.9 A
Peak Pulse Power 600 W
PolarityUnidirectional
Reverse Standoff Voltage130 V
TerminationSMD/SMT
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMBJ130AHE3/52.

Alternate Parts

Price @ 1000
$ 0.076
$ 0.076
Stock
3,660
605,442
605,442
Authorized Distributors
0
15
15
Polarity
Unidirectional
Unidirectional
Unidirectional
Number of Unidirectional Channels
-
1
1
Number of Bidirectional Channels
-
-
-
Breakdown Voltage
144 V
144 V
144 V
Clamping Voltage
209 V
209 V
209 V
Peak Pulse Power
600 W
600 W
600 W
Peak Pulse Current
2.9 A
2.9 A
2.9 A

Engineering Resources

View Evaluation kits and Reference designs for Vishay Semiconductor SMBJ130AHE3/52.

Related Parts

Descriptions

Descriptions of Vishay Semiconductor SMBJ130AHE3/52 provided by its distributors.

Diode TVS Single Uni-Dir 130V 600W 2-Pin SMB T/R
TVS UNIDIR 600W 130V 5% SMB
Transient Voltage Suppression Diode; Diode Case Style:DO-214AA; No. of Pins:2; Breakdown Voltage Range:144V to 159V; Clamping Voltage Vc Max:209V; Diode Configuration:Unidirectional; Peak Pulse Current Ippm:2.9A ;RoHS Compliant: Yes

Manufacturer Aliases

Vishay Semiconductor has several brands around the world that distributors may use as alternate names. Vishay Semiconductor may also be known as the following names:

  • Vishay Semiconductor Opto Division
  • Vishay Semiconductor Diodes Division
  • Vishay Semiconductors
  • VISHAY GENERAL SEMICONDUCTOR
  • GENERAL SEMICONDUCTOR
  • GEN SEMI
  • Vishay General Semiconductor - Diodes Division
  • VishaySem
  • General Semiconductor / Vishay
  • VISHAY SEMI
  • VISHAYSEMICOND
  • VISHAY - GENERAL SEMI
  • VISHAY SE
  • VISHAY SEMICONDUCTOR SSP OPTO
  • VISHAY SEMICONDUCTOR DIOD
  • VISHAY/GENERAL SEMICONDUCT0R
  • VISHAY GENERAL SEMICONDUC
  • VISHAY SEMICONDUCTOR PDD
  • GEN SEMI/VISHAY
  • Vishay General Semiconductors
  • Vishary General Semiconductor
  • VISHAY SEMICONDUCTOR ITALIANA

Technical Specifications

Physical
Case/PackageSMB
MountSurface Mount
Number of Pins2
Technical
Breakdown Voltage144 V
Clamping Voltage209 V
DirectionUnidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation600 W
Max Reverse Leakage Current1 µA
Max Surge Current100 A
Min Breakdown Voltage144 V
Min Operating Temperature-55 °C
Number of Channels1
Operating Supply Voltage130 V
Peak Pulse Current2.9 A
Peak Pulse Power 600 W
PolarityUnidirectional
Reverse Standoff Voltage130 V
TerminationSMD/SMT
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMBJ130AHE3/52.

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago