Vishay Semiconductor SMBJ11CAHE3/5B

Diode TVS Single Bi-Dir 11V 600W 2-Pin SMB T/R

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSMB
MountSurface Mount
Technical
Breakdown Voltage12.2 V
Clamping Voltage18.2 V
DirectionBidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation600 W
Max Reverse Leakage Current5 µA
Max Surge Current100 A
Min Breakdown Voltage12.2 V
Min Operating Temperature-55 °C
Number of Channels1
Operating Supply Voltage11 V
Peak Pulse Current33 A
Peak Pulse Power 600 W
PolarityBidirectional
Reverse Standoff Voltage11 V
Schedule B8541100080
TerminationSMD/SMT
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMBJ11CAHE3/5B.

Inventory History

3 month trend:
+0.00%

Alternate Parts

Price @ 1000
$ 0.327
$ 0.097
$ 0.097
Stock
19,200
835,310
835,310
Authorized Distributors
3
13
13
Polarity
Bidirectional
Bidirectional
Bidirectional
Number of Unidirectional Channels
-
-
-
Number of Bidirectional Channels
-
-
-
Breakdown Voltage
12.2 V
12.2 V
12.2 V
Clamping Voltage
18.2 V
18.2 V
18.2 V
Peak Pulse Power
600 W
600 W
600 W
Peak Pulse Current
33 A
33 A
33 A

Engineering Resources

View Evaluation kits and Reference designs for Vishay Semiconductor SMBJ11CAHE3/5B.

Related Parts

Descriptions

Descriptions of Vishay Semiconductor SMBJ11CAHE3/5B provided by its distributors.

Diode TVS Single Bi-Dir 11V 600W 2-Pin SMB T/R
TVS BIDIR 600W 11V 5% SMB
Trans Voltage Suppressor Diode, 600W, 11V V(Rwm), Bidirectional, 1 Element, Silicon, Do-214Aa |Vishay SMBJ11CAHE3/5B

Manufacturer Aliases

Vishay Semiconductor has several brands around the world that distributors may use as alternate names. Vishay Semiconductor may also be known as the following names:

  • Vishay Semiconductor Opto Division
  • Vishay Semiconductor Diodes Division
  • Vishay Semiconductors
  • VISHAY GENERAL SEMICONDUCTOR
  • GENERAL SEMICONDUCTOR
  • GEN SEMI
  • Vishay General Semiconductor - Diodes Division
  • VishaySem
  • General Semiconductor / Vishay
  • VISHAY SEMI
  • VISHAYSEMICOND
  • VISHAY - GENERAL SEMI
  • VISHAY SE
  • VISHAY SEMICONDUCTOR SSP OPTO
  • VISHAY SEMICONDUCTOR DIOD
  • VISHAY/GENERAL SEMICONDUCT0R
  • VISHAY GENERAL SEMICONDUC
  • VISHAY SEMICONDUCTOR PDD
  • GEN SEMI/VISHAY
  • Vishay General Semiconductors
  • Vishary General Semiconductor
  • VISHAY SEMICONDUCTOR ITALIANA

Part Number Aliases

This part may be known by these alternate part numbers:

  • SMBJ11CAHE35B

Technical Specifications

Physical
Case/PackageSMB
MountSurface Mount
Technical
Breakdown Voltage12.2 V
Clamping Voltage18.2 V
DirectionBidirectional
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation600 W
Max Reverse Leakage Current5 µA
Max Surge Current100 A
Min Breakdown Voltage12.2 V
Min Operating Temperature-55 °C
Number of Channels1
Operating Supply Voltage11 V
Peak Pulse Current33 A
Peak Pulse Power 600 W
PolarityBidirectional
Reverse Standoff Voltage11 V
Schedule B8541100080
TerminationSMD/SMT
Test Current1 mA

Documents

Download datasheets and manufacturer documentation for Vishay Semiconductor SMBJ11CAHE3/5B.

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago