Vishay Semiconductor SM8S13AHE3/2D
Technical Specifications
Physical
MountSurface Mount
Number of Pins2
Technical
Breakdown Voltage14.4 V
Clamping Voltage21.5 V
DirectionUnidirectional
Element ConfigurationSingle
Leakage Current10 µA
Max Operating Temperature175 °C
Max Power Dissipation6.6 kW
Max Reverse Leakage Current10 µA
Max Surge Current307 A
Min Breakdown Voltage14.4 V
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage13 V
PackagingTape and Reel
Peak Pulse Current307 A
Peak Pulse Power 6.6 kW
PolarityUnidirectional
Reverse Breakdown Voltage14.4 V
Reverse Standoff Voltage13 V
Test Current5 mA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.143
Stock
59,404
208,128
Authorized Distributors
0
5
Polarity
Unidirectional
-
Number of Unidirectional Channels
-
-
Number of Bidirectional Channels
-
-
Breakdown Voltage
14.4 V
-
Clamping Voltage
21.5 V
-
Peak Pulse Power
6.6 kW
-
Peak Pulse Current
307 A
-
Engineering Resources
View Evaluation kits and Reference designs for Vishay Semiconductor SM8S13AHE3/2D.
Descriptions
Descriptions of Vishay Semiconductor SM8S13AHE3/2D provided by its distributors.
Diode TVS Single Uni-Dir 13V 6.6KW Automotive 2-Pin DO-218AB T/R
TVS DIODE 13VWM 21.5VC DO218AB
Transient Voltage Suppression Diode; Reverse Stand-Off Voltage, VRWM:13V; Breakdown Voltage Range:14.4V to 15.9V; Clamping Voltage Max, Vc:21.5V; Diode Configuration:Unidirectional; Diode Case Style:DO-218AB; No. of Pins:2 ;RoHS Compliant: Yes
Manufacturer Aliases
Vishay Semiconductor has several brands around the world that distributors may use as alternate names. Vishay Semiconductor may also be known as the following names:
- Vishay Semiconductor Opto Division
- Vishay Semiconductor Diodes Division
- Vishay Semiconductors
- VISHAY GENERAL SEMICONDUCTOR
- GENERAL SEMICONDUCTOR
- GEN SEMI
- Vishay General Semiconductor - Diodes Division
- VishaySem
- General Semiconductor / Vishay
- VISHAY SEMI
- VISHAYSEMICOND
- VISHAY - GENERAL SEMI
- VISHAY SE
- VISHAY SEMICONDUCTOR SSP OPTO
- VISHAY SEMICONDUCTOR DIOD
- VISHAY/GENERAL SEMICONDUCT0R
- VISHAY GENERAL SEMICONDUC
- VISHAY SEMICONDUCTOR PDD
- GEN SEMI/VISHAY
- Vishay General Semiconductors
- Vishary General Semiconductor
- VISHAY SEMICONDUCTOR ITALIANA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
MountSurface Mount
Number of Pins2
Technical
Breakdown Voltage14.4 V
Clamping Voltage21.5 V
DirectionUnidirectional
Element ConfigurationSingle
Leakage Current10 µA
Max Operating Temperature175 °C
Max Power Dissipation6.6 kW
Max Reverse Leakage Current10 µA
Max Surge Current307 A
Min Breakdown Voltage14.4 V
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage13 V
PackagingTape and Reel
Peak Pulse Current307 A
Peak Pulse Power 6.6 kW
PolarityUnidirectional
Reverse Breakdown Voltage14.4 V
Reverse Standoff Voltage13 V
Test Current5 mA