Vishay SISA24DN-T1-GE3

N-Channel 25 V 1.4 mOhm 52 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8
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Datasheet

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Technical Specifications

Technical
Continuous Drain Current (ID)38.3 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.7 W
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm

Documents

Download datasheets and manufacturer documentation for Vishay SISA24DN-T1-GE3.

Newark
Datasheet7 pages7 years ago
Upverter
Datasheet7 pages6 years ago
Technical Drawing1 page16 years ago

Inventory History

3 month trend:
+0.71%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SISA24DN-T1-GE3.

Descriptions

Descriptions of Vishay SISA24DN-T1-GE3 provided by its distributors.

N-Channel 25 V 1.4 mOhm 52 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8
MOSFET, N-CH, 25V, 60A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:25V; On Resistance
MOSFET, N-CH, 25V, 60A, POWERPAK 1212; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.00115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 52W; Transistor Case Style: PowerPAK 1212; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)38.3 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.7 W
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm

Documents

Download datasheets and manufacturer documentation for Vishay SISA24DN-T1-GE3.

Newark
Datasheet7 pages7 years ago
Upverter
Datasheet7 pages6 years ago
Technical Drawing1 page16 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago