Vishay SIS932EDN-T1-GE3

Dual N-Channel 30 V 6 A 2.3 W Surface Mount MOSFET - POWERPAK-1212-8
Datasheet

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Technical Specifications

Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels2
Power Dissipation2.6 W
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Dimensions
Height1.17 mm

Documents

Download datasheets and manufacturer documentation for Vishay SIS932EDN-T1-GE3.

element14 APAC
Datasheet7 pages6 years ago
Future Electronics
Datasheet7 pages4 years ago
Upverter
Technical Drawing1 page7 years ago

Inventory History

3 month trend:
-34.87%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SIS932EDN-T1-GE3.

Descriptions

Descriptions of Vishay SIS932EDN-T1-GE3 provided by its distributors.

Dual N-Channel 30 V 6 A 2.3 W Surface Mount MOSFET - POWERPAK-1212-8
Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R
MOSFET, DUAL N-CH, 60V, POWERPAK 1212; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
MOSFET N-CH DL 30V PWRPAK 1212-8

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels2
Power Dissipation2.6 W
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Dimensions
Height1.17 mm

Documents

Download datasheets and manufacturer documentation for Vishay SIS932EDN-T1-GE3.

element14 APAC
Datasheet7 pages6 years ago
Future Electronics
Datasheet7 pages4 years ago
Upverter
Technical Drawing1 page7 years ago

Compliance

Environmental Classification
RoHSNon-Compliant
Compliance Statements
Rohs Statement5 pages12 years ago