Vishay SIR422DP-T1-GE3

Trans Mosfet N-ch 40V 40A 8-PIN Powerpak So T/r / Mosfet N-ch 40V 40A Ppak SO-8
Datasheet

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Technical Specifications

Physical
Case/PackageTO-262-3
MountSurface Mount, Through Hole
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.785 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation34.7 W
Manufacturer Package IdentifierS17-0173-Single
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max6.6 mΩ
Resistance6.6 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time28 ns
Turn-On Delay Time19 ns
Dimensions
Height1.0668 mm
Length5.969 mm
Width5.0038 mm

Documents

Download datasheets and manufacturer documentation for Vishay SIR422DP-T1-GE3.

Farnell
Datasheet13 pages11 years ago
Datasheet7 pages12 years ago
Datasheet13 pages8 years ago
Newark
Datasheet13 pages8 years ago
Datasheet13 pages8 years ago
Datasheet13 pages8 years ago
Upverter
Datasheet13 pages4 years ago
Technical Drawing1 page12 years ago
Technical Drawing1 page16 years ago
RS (Formerly Allied Electronics)
Datasheet7 pages14 years ago
element14 APAC
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-26.35%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SIR422DP-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SIR422DP-T1-GE3 provided by its distributors.

Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 40A PPAK SO-8
SIR422 Series 40 V 0.0066 Ohm 48 nC Single N-Channel Power Mosfet POWERPAK-SO-8
Transistors - FETs, MOSFETs - Single 1 (Unlimited) PowerPAK® SO-8 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.6m Ω @ 20A, 10V 40A Tc -55°C~150°C TJ MOSFET N-CH 40V 40A PPAK SO-8
MOSFET,N CH,DIODE,40V,40A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.5A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:34.7W Rohs Compliant: Yes |Vishay SIR422DP-T1-GE3.

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SIR422DP-T1-GE3.

Technical Specifications

Physical
Case/PackageTO-262-3
MountSurface Mount, Through Hole
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.785 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation34.7 W
Manufacturer Package IdentifierS17-0173-Single
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max6.6 mΩ
Resistance6.6 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time28 ns
Turn-On Delay Time19 ns
Dimensions
Height1.0668 mm
Length5.969 mm
Width5.0038 mm

Documents

Download datasheets and manufacturer documentation for Vishay SIR422DP-T1-GE3.

Farnell
Datasheet13 pages11 years ago
Datasheet7 pages12 years ago
Datasheet13 pages8 years ago
Newark
Datasheet13 pages8 years ago
Datasheet13 pages8 years ago
Datasheet13 pages8 years ago
Upverter
Datasheet13 pages4 years ago
Technical Drawing1 page12 years ago
Technical Drawing1 page16 years ago
RS (Formerly Allied Electronics)
Datasheet7 pages14 years ago
element14 APAC
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago