Vishay SIA517DJ-T1-GE3

Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R
Datasheet

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Technical Specifications

Physical
MountSurface Mount
Number of Pins6
Weight28.009329 mg
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)12 V
Fall Time25 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation6.5 W
Min Operating Temperature-55 °C
Nominal Vgs400 mV
Number of Channels2
Number of Elements2
Power Dissipation1.9 W
Rds On Max29 mΩ
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time30 ns
Dimensions
Height750 µm
Length2.05 mm
Width2.05 mm

Documents

Download datasheets and manufacturer documentation for Vishay SIA517DJ-T1-GE3.

Newark
Datasheet14 pages11 years ago
Datasheet14 pages7 years ago
Datasheet14 pages8 years ago
RS (Formerly Allied Electronics)
Datasheet14 pages7 years ago

Inventory History

3 month trend:
-17.19%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SIA517DJ-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SIA517DJ-T1-GE3 provided by its distributors.

Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R
MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Volt
Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Channel Type:N And P Channel; Drain Source Voltage Vds N Channel:12V; Drain Source Voltage Vds P Channel:12V; Continuous Drain Current Id N Channel:4.5A; Continuous Drain Current Id P Channel:4.5A; No. Of Pins:6Pins; Product Range:- Rohs Compliant: No |Vishay SIA517DJ-T1-GE3.

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SIA517DJ-T1-GE3.

Technical Specifications

Physical
MountSurface Mount
Number of Pins6
Weight28.009329 mg
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)12 V
Fall Time25 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation6.5 W
Min Operating Temperature-55 °C
Nominal Vgs400 mV
Number of Channels2
Number of Elements2
Power Dissipation1.9 W
Rds On Max29 mΩ
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time30 ns
Dimensions
Height750 µm
Length2.05 mm
Width2.05 mm

Documents

Download datasheets and manufacturer documentation for Vishay SIA517DJ-T1-GE3.

Newark
Datasheet14 pages11 years ago
Datasheet14 pages7 years ago
Datasheet14 pages8 years ago
RS (Formerly Allied Electronics)
Datasheet14 pages7 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago