Vishay SI7812DN-T1-E3
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance840 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max37 mΩ
Resistance37 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Inventory History
3 month trend: +2.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7812DN-T1-E3.
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Descriptions
Descriptions of Vishay SI7812DN-T1-E3 provided by its distributors.
Single N-Channel 75 V 37 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
Trans MOSFET N-CH 75V 7.2A 8-Pin PowerPAK 1212 T/R
75V 16A 37m´Î@10V7.2A 52W 3V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
Power Field-Effect Transistor, 7.2A I(D), 75V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHANNEL MOSFET, 75V, 16A POWERPAK
MOSFET N-CH 75V 16A PPAK1212-8
MOSFET, N CH, 75V, 16A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +2.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance840 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max37 mΩ
Resistance37 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements