Vishay SI7469DP-T1-GE3

Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
In Stock
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-28 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time105 ns
Turn-On Delay Time15 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7469DP-T1-GE3.

Farnell
Datasheet13 pages11 years ago
Datasheet13 pages11 years ago
Datasheet7 pages14 years ago
Datasheet13 pages8 years ago
Datasheet13 pages9 years ago
element14 APAC
Datasheet13 pages7 years ago
Upverter
Technical Drawing1 page12 years ago
Newark
Datasheet13 pages9 years ago

Inventory History

3 month trend:
-12.80%

Alternate Parts

Price @ 1000
$ 1.182
$ 1.22
$ 1.22
Stock
863,190
1,979,822
1,979,822
Authorized Distributors
12
14
14
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
-
Drain to Source Voltage (Vdss)
-80 V
-80 V
-80 V
Continuous Drain Current (ID)
-28 A
-28 A
-28 A
Threshold Voltage
-3 V
-10 V
-10 V
Rds On Max
25 mΩ
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
5.2 W
5.2 W
5.2 W
Input Capacitance
4.7 nF
4.7 nF
4.7 nF

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7469DP-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI7469DP-T1-GE3 provided by its distributors.

Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Si7469DP Series P-Channel 80 V 25 mOhms SMT Power Mosfet - PowerPAK SO-8
MOSFET, P-CH, -80V, -28A, POWERPAK SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -28A; Drain Source Voltage Vds: -80V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI7469DP-T1-GE3.
  • SI7469DPT1GE3

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-28 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time105 ns
Turn-On Delay Time15 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7469DP-T1-GE3.

Farnell
Datasheet13 pages11 years ago
Datasheet13 pages11 years ago
Datasheet7 pages14 years ago
Datasheet13 pages8 years ago
Datasheet13 pages9 years ago
element14 APAC
Datasheet13 pages7 years ago
Upverter
Technical Drawing1 page12 years ago
Newark
Datasheet13 pages9 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago