Vishay SI7469DP-T1-E3

Single P-Channel 80 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-28 A
Current27 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time220 ns
Schedule B8541290080
Threshold Voltage-10 V
Turn-Off Delay Time95 ns
Turn-On Delay Time45 ns
Voltage80 V
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7469DP-T1-E3.

Farnell
Datasheet13 pages11 years ago
Datasheet13 pages11 years ago
Datasheet7 pages14 years ago
Datasheet13 pages8 years ago
element14 APAC
Datasheet13 pages8 years ago
Newark
Datasheet13 pages8 years ago
iiiC
Datasheet13 pages11 years ago
RS (Formerly Allied Electronics)
Datasheet13 pages12 years ago
Future Electronics
Datasheet7 pages15 years ago

Inventory History

3 month trend:
-43.31%

Alternate Parts

Price @ 1000
$ 1.344
$ 1.208
Stock
1,782,124
779,224
Authorized Distributors
14
12
Mount
Surface Mount
Surface Mount
Case/Package
-
SOIC
Drain to Source Voltage (Vdss)
-80 V
-80 V
Continuous Drain Current (ID)
-28 A
-28 A
Threshold Voltage
-10 V
-3 V
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
5.2 W
5.2 W
Input Capacitance
4.7 nF
4.7 nF

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7469DP-T1-E3.

Descriptions

Descriptions of Vishay SI7469DP-T1-E3 provided by its distributors.

Single P-Channel 80 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-28000mA; Drain Source Voltage, Vds:-80V; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:5.2W ;RoHS Compliant: Yes
MOSFET, P CH, 80V, 28A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI7469DP-T1-E3.
  • SI7469DP-T1E3
  • SI7469DPT1E3

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-28 A
Current27 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time220 ns
Schedule B8541290080
Threshold Voltage-10 V
Turn-Off Delay Time95 ns
Turn-On Delay Time45 ns
Voltage80 V
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7469DP-T1-E3.

Farnell
Datasheet13 pages11 years ago
Datasheet13 pages11 years ago
Datasheet7 pages14 years ago
Datasheet13 pages8 years ago
element14 APAC
Datasheet13 pages8 years ago
Newark
Datasheet13 pages8 years ago
iiiC
Datasheet13 pages11 years ago
RS (Formerly Allied Electronics)
Datasheet13 pages12 years ago
Future Electronics
Datasheet7 pages15 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago