Vishay SI7252DP-T1-GE3

Dual N-Channel 100 V 18 mOhm 46 W TrenchFET Mosfet - PowerPAK SO-8
Datasheet

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Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)36.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.17 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation3.5 W
Rds On Max17 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time12 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7252DP-T1-GE3.

element14 APAC
Datasheet13 pages6 years ago
Newark
Datasheet13 pages8 years ago
Farnell
Datasheet9 pages10 years ago
Upverter
Datasheet13 pages6 years ago

Inventory History

3 month trend:
-100%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7252DP-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI7252DP-T1-GE3 provided by its distributors.

Dual N-Channel 100 V 18 mOhm 46 W TrenchFET Mosfet - PowerPAK SO-8
Transistor MOSFET Array Dual N-CH 100V 36.7A 8-Pin PowerPAK SO T/R
MOSFET, N-CH, 100V, 36.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:36.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:46W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)36.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.17 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation3.5 W
Rds On Max17 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time12 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7252DP-T1-GE3.

element14 APAC
Datasheet13 pages6 years ago
Newark
Datasheet13 pages8 years ago
Farnell
Datasheet9 pages10 years ago
Upverter
Datasheet13 pages6 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago