Vishay SI7113ADN-T1-GE3

Transistor MOSFET P-CH 100V 10.8A 8-Pin PowerPAK 1212
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Technical
Continuous Drain Current (ID)-3.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.5 W
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Dimensions
Height1.17 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7113ADN-T1-GE3.

Future Electronics
Datasheet9 pages3 years ago
Upverter
Datasheet7 pages4 years ago
Technical Drawing1 page16 years ago

Inventory History

3 month trend:
-100%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7113ADN-T1-GE3.

Descriptions

Descriptions of Vishay SI7113ADN-T1-GE3 provided by its distributors.

Transistor MOSFET P-CH 100V 10.8A 8-Pin PowerPAK 1212
Avnet Japan
MOSFET, P-CH, 100V, 10.8A, POWERPAK; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:10.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
Power Field-Effect Transistor, 10.8A I(D), 100V, 0.132ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)-3.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.5 W
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Dimensions
Height1.17 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7113ADN-T1-GE3.

Future Electronics
Datasheet9 pages3 years ago
Upverter
Datasheet7 pages4 years ago
Technical Drawing1 page16 years ago

Compliance

Environmental Classification
RoHSNon-Compliant
Compliance Statements
Rohs Statement5 pages12 years ago