Vishay SI5902BDC-T1-GE3

SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor; 3.7 A; 30V; 8-Pin 1206 ChipFET
Datasheet

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Technical Specifications

Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance53 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance220 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.12 W
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Channels2
Number of Elements2
PackagingTape & Reel (TR)
Power Dissipation1.5 W
Rds On Max65 mΩ
Resistance65 mΩ
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time10 ns
Turn-On Delay Time4 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI5902BDC-T1-GE3.

Newark
Datasheet11 pages8 years ago
Datasheet11 pages10 years ago
Datasheet11 pages8 years ago
RS (Formerly Allied Electronics)
Datasheet7 pages14 years ago
Upverter
Datasheet11 pages5 years ago

Inventory History

3 month trend:
+13.52%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI5902BDC-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI5902BDC-T1-GE3 provided by its distributors.

SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor; 3.7 A; 30V; 8-Pin 1206 ChipFET
Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8
Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin Chip FET T/R
30V 4A 65m´Î@10V3.1A 3.12W 3V@250Ã×A 2 N-Channel 1206-8 ChipFET MOSFETs ROHS
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(On):0.053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:8Pinsrohs Compliant: No

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI5902BDC-T1-GE3.

Technical Specifications

Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance53 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance220 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.12 W
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Channels2
Number of Elements2
PackagingTape & Reel (TR)
Power Dissipation1.5 W
Rds On Max65 mΩ
Resistance65 mΩ
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time10 ns
Turn-On Delay Time4 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI5902BDC-T1-GE3.

Newark
Datasheet11 pages8 years ago
Datasheet11 pages10 years ago
Datasheet11 pages8 years ago
RS (Formerly Allied Electronics)
Datasheet7 pages14 years ago
Upverter
Datasheet11 pages5 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago