Vishay Siliconix SI5515DC-T1-E3

Dual N & P Channel 20 V 0.04 Ohms Surface Mount Power Mosfet - 1206-8 ChipFET
Datasheet

Price and Stock

Technical Specifications

Physical
Case/Package1206
MountSurface Mount
Number of Pins8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Resistance69 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time32 ns
Gate to Source Voltage (Vgs)8 V
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Operating Temperature-55 °C
Nominal Vgs400 mV
Number of Channels2
Number of Elements2
Power Dissipation1.1 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time32 ns
Threshold Voltage400 mV
Turn-Off Delay Time42 ns
Turn-On Delay Time18 ns
Dimensions
Height1.1 mm
Length3.05 mm
Width1.65 mm

Documents

Download datasheets and manufacturer documentation for Vishay Siliconix SI5515DC-T1-E3.

Farnell
Datasheet9 pages14 years ago
Datasheet9 pages15 years ago
Newark
Datasheet13 pages8 years ago
Datasheet13 pages8 years ago
iiiC
Datasheet13 pages11 years ago
Jameco
Datasheet10 pages16 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay Siliconix SI5515DC-T1-E3.

Descriptions

Descriptions of Vishay Siliconix SI5515DC-T1-E3 provided by its distributors.

Dual N & P Channel 20 V 0.04 Ohms Surface Mount Power Mosfet - 1206-8 ChipFET
COMPLEMENTARY 20-V (D-S) MOSFET | Siliconix / Vishay SI5515DC-T1-E3
Trans MOSFET N/P-CH 20V 4.4A/3A 8-Pin Chip FET T/R
Dual N/p Channel Mosfet, 20V, 1206
N/P-CH 1206-8 CHIPFET 20V 40/86MOHM @ 4.5V<AZ
COMPLEMENTARY 20-V (D-S) MOSFET
French Electronic Distributor since 1988
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:400mV

Manufacturer Aliases

Vishay Siliconix has several brands around the world that distributors may use as alternate names. Vishay Siliconix may also be known as the following names:

  • SILICONIX/VISHAY
  • Siliconix (Vishay Siliconix)
  • VISHAY SILICONIX INC
  • VISHAY-SILICONIX(RoHS)
  • VISHAY AMERICAS/SILICONIX
  • SILICONIX INC/VISHAY
  • VISHAY SILIC
  • SILI / VIS
  • VISHAY/SILICONIX (VA)

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI5515DCT1E3

Technical Specifications

Physical
Case/Package1206
MountSurface Mount
Number of Pins8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Resistance69 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time32 ns
Gate to Source Voltage (Vgs)8 V
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Operating Temperature-55 °C
Nominal Vgs400 mV
Number of Channels2
Number of Elements2
Power Dissipation1.1 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time32 ns
Threshold Voltage400 mV
Turn-Off Delay Time42 ns
Turn-On Delay Time18 ns
Dimensions
Height1.1 mm
Length3.05 mm
Width1.65 mm

Documents

Download datasheets and manufacturer documentation for Vishay Siliconix SI5515DC-T1-E3.

Farnell
Datasheet9 pages14 years ago
Datasheet9 pages15 years ago
Newark
Datasheet13 pages8 years ago
Datasheet13 pages8 years ago
iiiC
Datasheet13 pages11 years ago
Jameco
Datasheet10 pages16 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago