Vishay SI5448DU-T1-GE3

Trans MOSFET N-CH 40V 25A 8-Pin PowerPAK ChipFET T/R
Datasheet

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Technical Specifications

Technical
Continuous Drain Current (ID)15.9 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.46 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.1 W
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height850 µm

Documents

Download datasheets and manufacturer documentation for Vishay SI5448DU-T1-GE3.

element14 APAC
Datasheet7 pages7 years ago
Future Electronics
Datasheet7 pages4 years ago
Upverter
Technical Drawing1 page16 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI5448DU-T1-GE3.

Descriptions

Descriptions of Vishay SI5448DU-T1-GE3 provided by its distributors.

Trans MOSFET N-CH 40V 25A 8-Pin PowerPAK ChipFET T/R
MOSFET, N-CH, 40V, 25A, POWERPAK CHIPFET; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:40V; On Resistance
MOSFET, N-CH, 40V, 25A, POWERPAK CHIPFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00646ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 31W; Transistor Case Style: PowerPAK ChipFET; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Technical
Continuous Drain Current (ID)15.9 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.46 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.1 W
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height850 µm

Documents

Download datasheets and manufacturer documentation for Vishay SI5448DU-T1-GE3.

element14 APAC
Datasheet7 pages7 years ago
Future Electronics
Datasheet7 pages4 years ago
Upverter
Technical Drawing1 page16 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago