Vishay SI4946BEY-T1-GE3
In Stock
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance840 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.7 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.4 W
Rds On Max41 mΩ
Resistance41 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2.4 V
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: -3.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SI4946BEY-T1-GE3.
Newark
Megastar
RS (Formerly Allied Electronics)
TME
iiiC
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI4946BEY-T1-GE3.
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Transistor MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
Descriptions
Descriptions of Vishay SI4946BEY-T1-GE3 provided by its distributors.
Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R
Avnet Japan
SI4946BEY-T1-GE3 Dual N-channel MOSFET Transistor, 6.5 A, 60 V, 8-Pin SOIC | Siliconix / Vishay SI4946BEY-T1-GE3
DUAL N-CH MOSFET SO-8 60V 41MOHM @ 10V 175C- LEAD(PB) AND HALOGEN FREE
MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 3.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -3.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance840 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.7 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.4 W
Rds On Max41 mΩ
Resistance41 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2.4 V
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI4946BEY-T1-GE3.
Newark
Megastar
RS (Formerly Allied Electronics)
TME
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements