Vishay SI4563DY-T1-E3

Trans Mosfet N/p-ch 40V 8A/6.6A 8-PIN SOIC N T/r
Datasheet

Technical Specifications

Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time69 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.39 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max16 mΩ
Resistance25 mΩ
Rise Time93 ns
Threshold Voltage2 V
Turn-Off Delay Time80 ns
Turn-On Delay Time33 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI4563DY-T1-E3.

Newark
Datasheet12 pages8 years ago
Farnell
Datasheet15 pages10 years ago
element14
Datasheet15 pages11 years ago
Datasheet12 pages13 years ago
Future Electronics
Datasheet12 pages14 years ago
iiiC
Datasheet15 pages11 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI4563DY-T1-E3.

Descriptions

Descriptions of Vishay SI4563DY-T1-E3 provided by its distributors.

Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:NPN & PNP; Rds(on) Test Voltage, Vgs:16V; Package/Case:8-SOIC; Termination Type:SMD; No. of Pins:8 ;RoHS Compliant: Yes
DUAL N/P CHANNEL MOSFET, 40V, SOIC; Tran; DUAL N/P CHANNEL MOSFET, 40V, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time69 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.39 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max16 mΩ
Resistance25 mΩ
Rise Time93 ns
Threshold Voltage2 V
Turn-Off Delay Time80 ns
Turn-On Delay Time33 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI4563DY-T1-E3.

Newark
Datasheet12 pages8 years ago
Farnell
Datasheet15 pages10 years ago
element14
Datasheet15 pages11 years ago
Datasheet12 pages13 years ago
Future Electronics
Datasheet12 pages14 years ago
iiiC
Datasheet15 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago