Vishay SI4554DY-T1-GE3

Trans Mosfet N/p-ch 40V 6.8A/6.6A 8-PIN SOIC N T/r / Mosfet N/p-ch 40V 8A 8SO
Datasheet

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Technical Specifications

Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance690 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.2 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max24 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time40 ns
Turn-On Delay Time42 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI4554DY-T1-GE3.

Farnell
Datasheet15 pages10 years ago
Datasheet10 pages11 years ago
Upverter
Datasheet14 pages6 years ago

Inventory History

3 month trend:
-29.02%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI4554DY-T1-GE3.

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Descriptions

Descriptions of Vishay SI4554DY-T1-GE3 provided by its distributors.

Trans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R / MOSFET N/P-CH 40V 8A 8SO
VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
MOSFET, N/P-CH, 40V, 8-SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

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Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance690 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.2 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max24 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time40 ns
Turn-On Delay Time42 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI4554DY-T1-GE3.

Farnell
Datasheet15 pages10 years ago
Datasheet10 pages11 years ago
Upverter
Datasheet14 pages6 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago